Diffusion-limited agglomeration and defect generation during chemical mechanical planarization

TitleDiffusion-limited agglomeration and defect generation during chemical mechanical planarization
Publication TypeJournal Article
Year of Publication2008
AuthorsBiswas R, Han YY, Karra P, Sherman P, Chandra A
Journal TitleJournal of the Electrochemical Society
Volume155
PagesD534-D537
Type of ArticleArticle
ISBN Number0013-4651
Accession NumberISI:000257421600032
Abstract

Chemical mechanical planarization (CMP) of copper involves removal of surface asperities with abrasive particles and polishing processes. This leads to copper-containing nanoparticles extruded into the solution. We model the diffusion-limited agglomeration (DLA) of such nanoparticles which can rapidly grow to large sizes. These large particles are detrimental because they can participate in polishing, causing scratches and surface defects during CMP. The agglomeration is much slower in the reaction-limited agglomeration process. Under realistic conditions the defect generation probability can increase significantly over time scales of similar to 10 to 20 min from DLA, unless prevented by slurry rejuvenation or process modification measures. (C) 2008 The Electrochemical Society.

DOI10.1149/1.2931519
Alternate JournalJ. Electrochem. Soc.