K-Doping Dependence of the Fermi Surface of the Iron-Arsenic Ba1-xKxFe2As2 Superconductor Using Angle-Resolved Photoemission Spectroscopy

TitleK-Doping Dependence of the Fermi Surface of the Iron-Arsenic Ba1-xKxFe2As2 Superconductor Using Angle-Resolved Photoemission Spectroscopy
Publication TypeJournal Article
Year of Publication2008
AuthorsLiu C, Samolyuk GD, Lee Y, Ni N, Kondo T, Santander-Syro AF, Bud'ko SL, McChesney JL, Rotenberg E, Valla T, Fedorov AV, Canfield PC, Harmon BN, Kaminski A
Journal TitlePhysical Review Letters
Volume101
Pages177005
Date Published10/01
Type of ArticleArticle
ISBN Number0031-9007
Accession NumberISI:000260383600056
Keywordscompound, gap, lao1-xfxfeas
Abstract

We use angle-resolved photoemission spectroscopy to investigate the electronic properties of the newly discovered iron-arsenic superconductor Ba1-xKxFe2As2 and nonsuperconducting BaFe2As2. Our study indicates that the Fermi surface of the undoped, parent compound BaFe2As2 consists of hole pocket(s) at Gamma (0,0) and larger electron pocket(s) at X (1,0), in general agreement with full-potential linearized plane wave calculations. Upon doping with potassium, the hole pocket expands and the electron pocket becomes smaller with its bottom approaching the chemical potential. Such an evolution of the Fermi surface is consistent with hole doping within a rigid-band shift model. Our results also indicate that the full-potential linearized plane wave calculation is a reasonable approach for modeling the electronic properties of both undoped and K-doped iron arsenites.

DOI10.1103/PhysRevLett.101.177005
Alternate JournalPhys. Rev. Lett.