Crystallographic phase transition and island height selection in In/Si(111) growth

TitleCrystallographic phase transition and island height selection in In/Si(111) growth
Publication TypeJournal Article
Year of Publication2008
AuthorsChen J, Hupalo M, Ji M, Wang CZ, Ho KM, Tringides MC
Journal TitlePhysical Review B
Volume77
Pages233302
Date PublishedJun
Type of ArticleArticle
ISBN Number1098-0121
Accession NumberISI:000257289500008
Keywordselectron-microscopy, films, indium, size
Abstract

In/Si(111) has been studied with spot profile analysis low-energy electron diffraction, scanning tunneling microscope, and first-principles total energy calculations to identify its growth morphology at low temperatures. Of the different substrate interfaces used, only In growth on Si(111)-Pb-alpha-root 3x root 3 has resulted in uniform height fcc (111) four-layer islands. A transition to the bulk bct (101) oriented islands is favored at higher temperatures T>250 K and/or larger coverages theta>5 ML. These results suggest two stabilizing effects for the preferred morphologies, i.e., quantum size effects and orientation dependent surface and interface energies. These stabilizing effects are suppported from first-principles calculations.

DOI10.1103/PhysRevB.77.233302
Alternate JournalPhys. Rev. B