# Single-crystal growth and physical properties of the layered arsenide BaRh2As2

Title | Single-crystal growth and physical properties of the layered arsenide BaRh2As2 |

Publication Type | Journal Article |

Year of Publication | 2008 |

Authors | Singh Y, Lee Y, Nandi S, Kreyssig A, Ellern A, Das S, Nath R, Harmon BN, Goldman AI, Johnston DC |

Journal Title | Physical Review B |

Volume | 78 |

Pages | 104512 |

Date Published | Sep |

Type of Article | Article |

ISBN Number | 1098-0121 |

Accession Number | ISI:000259690400088 |

Keywords | superconductivity |

Abstract | Single crystals of BaRh2As2 have been synthesized from a Pb flux. We present the room-temperature crystal structure, single-crystal x-ray diffraction measurements as a function of temperature T, anisotropic magnetic susceptibility chi versus T, electrical resistivity in the ab plane rho versus T, Hall coefficient versus T and magnetic field H, and heat capacity C versus T measurements on the crystals. The single-crystal structure determination confirms that BaRh2As2 forms in the tetragonal ThCr2Si2-type structure (space group I4/mmm) with lattice parameters a=b=4.0564(6) angstrom and c=12.797(4) angstrom. Band-structure calculations show that BaRh2As2 should be metallic with a small density of states at the Fermi energy N(E-F)=3.49 states/eV f.u. (where f.u. equivalent to formula unit) for both spin directions. rho(T) data in the ab plane confirm that the material is indeed metallic with a residual resistivity rho(2 K)=29 mu Omega cm and with a residual resistivity ratio rho(310 K)/rho(2 K)=5.3. The observed chi(T) is small (similar to 10(-5) cm(3)/mol) and weakly anisotropic with chi(ab)/chi(c)approximate to 2. The C(T) data indicate a small density of states at the Fermi energy with the low-temperature Sommerfeld coefficient gamma=4.7(9) mJ/mol K-2. There are no indications of superconductivity, spin-density wave, or structural transitions between 2 and 300 K. We compare the calculated density of states versus energy of BaRh2As2 with that of BaFe2As2. |

DOI | 10.1103/PhysRevB.78.104512 |

Alternate Journal | Phys. Rev. B |