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Selective Removal of Ligands from Colloidal Nanocrystal Assemblies with Non-Oxidizing He Plasmas

TitleSelective Removal of Ligands from Colloidal Nanocrystal Assemblies with Non-Oxidizing He Plasmas
Publication TypeJournal Article
Year of Publication2018
AuthorsShaw, S, Tian, XC, Silva, TF, Bobbitt, JM, Naab, F, Rodrigues, CL, Smith, EA, Cademartiri, L
JournalChemistry of Materials
Volume30
Pagination5961-5967
Date Published09
Type of ArticleArticle
ISBN Number0897-4756
Accession NumberWOS:000444792800020
Keywordsbuilding-materials, chemistry, field-effect transistors, ligands, Materials Science, mechanical-properties, nanoparticles, polymers, raman-spectroscopy, superlattices, surface, thin-films, vacuum-ultraviolet
Abstract

Helium plasmas are attractive reagents for the removal of organics from hybrid materials because of their minimal ablative power and relative inertness, compared to oxidizing feed gases such as O-2 and highly ablative inert gases such as Ar. This work describes the use of dilute helium plasmas to selectively remove the organic ligands from films of colloidal nanoparticles (i.e., colloidal nanoparticle assemblies). We determine the relative contribution to etching of different plasma species in a model system consisting of films of ZrO2 nanoparticles capped with trioctylphosphine oxide. Unexpectedly, we find that the strong ultraviolet radiation of He plasma is only a minor contributor to etching (25% of the etched carbon). Excited He species are responsible for most of the etching (75% of the etched carbon). Carbon concentrations as low as 3.5 atom % can be achieved under non-optimized plasma processing conditions.

DOI10.1021/acs.chemmater.8b02095
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Alternate JournalChem. Mat.