You are here

Nucleation in Pb/Si(111) at Low Temperatures

Title Nucleation in Pb/Si(111) at Low Temperatures
Publication TypeJournal Article
Year of Publication2014
AuthorsHershberger, MT, Hupalo, M, Thiel, PA, Wang, CZ, Ho, KM, Tringides, MC
JournalPhysical Review Letters
Volume113
Pagination236101
Date Published12
Type of ArticleArticle
ISBN Number0031-9007
Accession NumberWOS:000348133700013
Keywordsevolution, growth, layers, nanostructures, pb, si(111)
Abstract

out of the compressed wetting layer after a critical coverage Theta(c) = 1.22 ML is reached. The unexpectedly high island growth rates, the directional correlations in the growth of neighboring islands and the persistence in time of where mass is added in individual islands, suggest that nucleation is a result of the highly coherent motion of the wetting layer, over mesoscopic distances.

DOI10.1103/PhysRevLett.113.236101
Custom 1

Surface Structures