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Magnetotransport study of (Sb1-xBix)(2)Te-3 thin films on mica substrate for ideal topological insulator

TitleMagnetotransport study of (Sb1-xBix)(2)Te-3 thin films on mica substrate for ideal topological insulator
Publication TypeJournal Article
Year of Publication2016
AuthorsNi, Y, Zhang, Z, Nlebedim, CI, Jiles, DC
JournalAip Advances
Volume6
Pagination055812
Date Published05
Type of ArticleArticle; Proceedings Paper
ISBN Number2158-3226
Accession NumberWOS:000377962500125
Keywordsbi2se3, bi2te3, Materials Science, physics, surface-states, Technology - Other Topics
Abstract

We deposited high quality (Sb1-xBix)(2)Te-3 on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (Sb0.957Bi0.043)(2)Te-3, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is then determined as 0.81 x 10(16) m(-2), which is lower than that of most TIs reported previously, indicating that (Sb(0.957B)i(0.043))(2)Te-3 is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (Sb0.957Bi0.043)(2)Te-3 and will be helpful for designing TI-based devices. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

DOI10.1063/1.4943156
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Alternate JournalAIP Adv.