Title | Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes |
Publication Type | Journal Article |
Year of Publication | 2015 |
Authors | Djidjou, TK, Chen, Y, Basel, T, Shinar, J, Rogachev, A |
Journal | Journal of Applied Physics |
Volume | 117 |
Pagination | 115501 |
Date Published | 03 |
Type of Article | Article |
ISBN Number | 0021-8979 |
Accession Number | WOS:000351604900059 |
Keywords | devices, low-frequency noise, magnetoresistance, room-temperature, spectrum analyzer |
Abstract | -ethylhexyloxy)1,4-phenylenevinylene-based organic light emitting diodes with dominant hole injection, dominant electron injection, and balanced electron and hole injection. The noise spectra of the balanced devices revealed the generation-recombination (g-r) noise term, which we associated with bimolecular electron-hole recombination. The presence of the g-r noise term is correlated with the strong organic magnetoresistance (up to 25%) observed in the balanced devices. The noise spectra also have the shot noise contribution with the Fano factor 0.25-0.4. We found that time constant of the g-r term decreases and the magnitude of shot noise increases when magnetic field is applied. This behavior can be consistently explained within the polaron-polaron model of organic magnetoresistance. We have not found any evidence that the magnetoresistance in studied devices is affected by traps. (C) 2015 AIP Publishing LLC. |
DOI | 10.1063/1.4914519 |
Custom 1 | Photonics |