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Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes

TitleMagnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes
Publication TypeJournal Article
Year of Publication2015
AuthorsDjidjou, TK, Chen, Y, Basel, T, Shinar, J, Rogachev, A
JournalJournal of Applied Physics
Volume117
Pagination115501
Date Published03
Type of ArticleArticle
ISBN Number0021-8979
Accession NumberWOS:000351604900059
Keywordsdevices, low-frequency noise, magnetoresistance, room-temperature, spectrum analyzer
Abstract

-ethylhexyloxy)1,4-phenylenevinylene-based organic light emitting diodes with dominant hole injection, dominant electron injection, and balanced electron and hole injection. The noise spectra of the balanced devices revealed the generation-recombination (g-r) noise term, which we associated with bimolecular electron-hole recombination. The presence of the g-r noise term is correlated with the strong organic magnetoresistance (up to 25%) observed in the balanced devices. The noise spectra also have the shot noise contribution with the Fano factor 0.25-0.4. We found that time constant of the g-r term decreases and the magnitude of shot noise increases when magnetic field is applied. This behavior can be consistently explained within the polaron-polaron model of organic magnetoresistance. We have not found any evidence that the magnetoresistance in studied devices is affected by traps. (C) 2015 AIP Publishing LLC.

DOI10.1063/1.4914519
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Photonics