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Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2

TitleLinear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2
Publication TypeJournal Article
Year of Publication2015
AuthorsNarayanan, A, Watson, MD, Blake, SF, Bruyant, N, Drigo, L, Chen, YL, Prabhakaran, D, Yan, B, Felser, C, Kong, T, Canfield, PC, Coldea, AI
JournalPhysical Review Letters
Volume114
Pagination117201
Date Published03
Type of ArticleArticle
ISBN Number0031-9007
Accession NumberWOS:000351430600011
Keywordscadmium arsenide, dirac semimetal cd3as2, Graphene, magnetic-properties, scattering, surface
Abstract

ce persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g similar to 16).

DOI10.1103/PhysRevLett.114.117201
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Complex States