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Influence of Mn Concentration on Magnetic Topological Insulator MnxBi2-xTe3 Thin-Film Hall-Effect Sensor

TitleInfluence of Mn Concentration on Magnetic Topological Insulator MnxBi2-xTe3 Thin-Film Hall-Effect Sensor
Publication TypeJournal Article
Year of Publication2015
AuthorsNi, Y, Zhang, Z, Nlebedim, IC, Hadimani, RL, Jiles, DC
JournalIeee Transactions on Magnetics
Volume51
Pagination4004704
Date Published11
Type of ArticleArticle; Proceedings Paper
ISBN Number0018-9464
Accession NumberWOS:000364770500320
Keywordsbi2te3, ferromagnetism, Hall-effect (HE) devices, insulators (TIs), sensitivity, Thin films, topological
Abstract

that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Omega/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.

DOI10.1109/tmag.2015.2444378
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