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Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

TitleGate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet
Publication TypeJournal Article
Year of Publication2016
AuthorsKawakami, E, Jullien, T, Scarlino, P, Ward, DR, Savage, DE, Lagally, MG, Dobrovitski, VV, Friesen, M, Coppersmith, SN, Eriksson, MA, Vandersypen, LMK
JournalProceedings of the National Academy of Sciences of the United States of America
Volume113
Pagination11738-11743
Date Published10
Type of ArticleArticle
ISBN Number0027-8424
Accession NumberWOS:000385610400049
Keywordsbenchmarking, dynamical decoupling, electron spin, qubit, randomized, seconds, Si/SiGe quantum dot, silicon, Technology - Other Topics
Abstract

The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of similar to 99% using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in the substrate. The coherence time measured using dynamical decoupling extends up to similar to 400 mu s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10-kHz to 1-MHz range, possibly because charge noise affects the spin via the micromagnet gradient. This work shows that an electron spin in an Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.

DOI10.1073/pnas.1603251113
Custom 1

Nanoscale and Ultrafast

Alternate JournalProc. Natl. Acad. Sci. U. S. A.