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Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

TitleFew-Layer GeAs Field-Effect Transistors and Infrared Photodetectors
Publication TypeJournal Article
Year of Publication2018
AuthorsGuo, J, Liu, Y, Ma, Y, Zhu, EB, Lee, S, Lu, ZX, Zhao, ZP, Xu, CH, Lee, SJ, Wu, H, Kovnir, K, Huang, Y, Duan, XF
JournalAdvanced Materials
Volume30
Pagination1705934
Date Published05
Type of ArticleArticle
ISBN Number0935-9648
Accession NumberWOS:000434032600005
Keywords2-dimensional semiconductors, 2D semiconductors, chemistry, few-layer, field-effect transistors, films, GeAs, infrared, Materials Science, mobility, monolayer mos2, mos2 transistors, mosfets, multilayer mos2, photodetectors, physics, scattering, Technology - Other Topics
Abstract

-layer GeAs field-effect transistors. With back-gate device geometry, p-type behaviors are observed at room temperature. Importantly, the hole carrier mobility is found to approach 100 cm(2) V-1 s(-1) with ON-OFF ratio over 10(5), comparable well with state-of-the-art TMD devices. With the unique crystal structure the few-layer GeAs show highly anisotropic optical and electronic properties (anisotropic mobility ratio of 4.8). Furthermore, GeAs based transistor shows prominent and rapid photoresponse to 1.6 mu m radiation with a photoresponsivity of 6 A W-1 and a rise and fall time of approximate to 3 ms. This study of group IV-V 2DSC materials greatly expands the 2D family, and can enable new opportunities in functional electronics and optoelectronics based on 2DSCs.

DOI10.1002/adma.201705934
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