|Title||Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors|
|Publication Type||Journal Article|
|Year of Publication||2018|
|Authors||Guo, J, Liu, Y, Ma, Y, Zhu, EB, Lee, S, Lu, ZX, Zhao, ZP, Xu, CH, Lee, SJ, Wu, H, Kovnir, K, Huang, Y, Duan, XF|
|Type of Article||Article|
|Keywords||2-dimensional semiconductors, 2D semiconductors, chemistry, few-layer, field-effect transistors, films, GeAs, infrared, Materials Science, mobility, monolayer mos2, mos2 transistors, mosfets, multilayer mos2, photodetectors, physics, scattering, Technology - Other Topics|
-layer GeAs field-effect transistors. With back-gate device geometry, p-type behaviors are observed at room temperature. Importantly, the hole carrier mobility is found to approach 100 cm(2) V-1 s(-1) with ON-OFF ratio over 10(5), comparable well with state-of-the-art TMD devices. With the unique crystal structure the few-layer GeAs show highly anisotropic optical and electronic properties (anisotropic mobility ratio of 4.8). Furthermore, GeAs based transistor shows prominent and rapid photoresponse to 1.6 mu m radiation with a photoresponsivity of 6 A W-1 and a rise and fall time of approximate to 3 ms. This study of group IV-V 2DSC materials greatly expands the 2D family, and can enable new opportunities in functional electronics and optoelectronics based on 2DSCs.
|Custom 1|| |