|Title||Ferromagnetism of magnetically doped topological insulators in CrxBi2-xTe3 thin films|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Ni, Y, Zhang, Z, Nlebedim, IC, Hadimani, RL, Tuttle, G, Jiles, DC|
|Journal||Journal of Applied Physics|
|Type of Article||Article|
ization of CrxBi2-xTe3. When x = 0.14 and 0.29, ferromagnetism appears in CrxBi2-xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices. (C) 2015 AIP Publishing LLC.
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