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Ferromagnetism of magnetically doped topological insulators in CrxBi2-xTe3 thin films

TitleFerromagnetism of magnetically doped topological insulators in CrxBi2-xTe3 thin films
Publication TypeJournal Article
Year of Publication2015
AuthorsNi, Y, Zhang, Z, Nlebedim, IC, Hadimani, RL, Tuttle, G, Jiles, DC
JournalJournal of Applied Physics
Volume117
Pagination17c748
Date Published05
Type of ArticleArticle
ISBN Number0021-8979
Accession NumberWOS:000354984100315
Abstract

ization of CrxBi2-xTe3. When x = 0.14 and 0.29, ferromagnetism appears in CrxBi2-xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices. (C) 2015 AIP Publishing LLC.

DOI10.1063/1.4918560
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