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Effect of Nanostructuring and High-Pressure Torsion Process on Thermal Conductivity of Carrier-Doped Chalcopyrite

TitleEffect of Nanostructuring and High-Pressure Torsion Process on Thermal Conductivity of Carrier-Doped Chalcopyrite
Publication TypeJournal Article
Year of Publication2016
AuthorsTsujii, N, Meng, FQ, Tsuchiya, K, Maruyama, S, Mori, T
JournalJournal of Electronic Materials
Volume45
Pagination1642-1647
Date Published03
Type of ArticleArticle
ISBN Number0361-5235
Accession NumberWOS:000371163400062
KeywordsChalcopyrite, enhancement, high-pressure, magnetic semiconductor, mineral-based material, nanostructuring, Spark plasma sintering, thermal conductivity, thermoelectric properties, torsion
Abstract

milar to that of a bulk sample above room temperature. The HPT-treated sample showed a significant drop in thermal conductivity over the entire temperature range. However, the electrical resistivity increased, resulting in a degradation of the overall thermoelectric performance. Annealing at 520 K after HPT was partly effective in recovering the electrical conductivity while retaining low thermal conductivity.

DOI10.1007/s11664-015-4147-0
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