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Cross-sectional aspect ratio modulated electronic properties in Si/Ge core/shell nanowires

TitleCross-sectional aspect ratio modulated electronic properties in Si/Ge core/shell nanowires
Publication TypeJournal Article
Year of Publication2013
AuthorsLiu, N, Lu, N, Yao, YX, Zhang, GP, Wang, CZ, Ho, KM
JournalJournal of Physics D-Applied Physics
Volume46
Pagination135302
Date Published04
Type of ArticleArticle
ISBN Number0022-3727
Accession NumberWOS:000315948500022
Keywordsge/si, growth, metals, molecular-dynamics, sensor, si, silicon nanowires, total-energy calculations
Abstract

Electronic structures of (4, n) and (m, 4) (the NW has m layers parallel to the {1 1 1} facet and n layers parallel to {1 1 0}) Si/Ge core/shell nanowires (NWs) along the [1 1 2] direction with cross-sectional aspect ratio (m/n) from 0.36 to 2.25 are studied by first-principles calculations. An indirect to direct band gap transition is observed as m/n decreases, and the critical values of m/n and diameter for the transition are also estimated. The size of the band gap also depends on the aspect ratio. These results suggest that m/n plays an important role in modulating the electronic properties of the NWs.

DOI10.1088/0022-3727/46/13/135302
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Exploratory Theory