Structural transformations in Pb/Si(111) phases induced by C-60 adsorption

TitleStructural transformations in Pb/Si(111) phases induced by C-60 adsorption
Publication TypeJournal Article
Year of Publication2013
AuthorsMatetskiy AV, Bondarenko LV, Gruznev DV, Zotov AV, Saranin AA, Tringides MC
Journal TitleJournal of Physics-Condensed Matter
Volume25
Pages100503
Date Published10
Type of ArticleArticle
ISBN Number0953-8984
Accession NumberWOS:000324307000008
Keywordssurface
Abstract

Structural transformations at the Pb/Si(111) surface occurring upon C-60 adsorption onto Pb/Si(111) 1 x 1 phase at room temperature and Pb/Si(111) root 7 x root 3 at low temperatures between 30 and 210 K, have been studied using scanning tunneling microscopy and low-energy electron diffraction observations. Typically, C-60 fullerenes agglomerate into random molecular islands nucleated at the surface defects. C-60 island formation is accompanied by expelling Pb atoms to the surrounding surface area where more dense Pb/Si(111) phases form. Productivity of C-60-induced expelling of Pb atoms is controlled by surface defects and is suppressed dramatically when regular ('crystalline') C-60 islands self-assemble at the defect-free Pb/Si(111) surface. When Pb atoms are ejected by the random C-60 islands, extended structural transformations involving reordering of numerous Pb atoms are fully completed at the surface within the shortest possible time (a few dozen seconds) to reapproach and image the surface after C-60 deposition. Estimations show that the observed transformations cannot be controlled by random walk diffusion of Pb adatoms, which implies a highly correlated motion of the Pb atom displacements within the layer.

URL<Go to ISI>://WOS:000324307000008
DOI10.1088/0953-8984/25/39/395006