Growth of fcc(111) Dy multi-height islands on 6H-SiC(0001) graphene

TitleGrowth of fcc(111) Dy multi-height islands on 6H-SiC(0001) graphene
Publication TypeJournal Article
Year of Publication2013
AuthorsHershberger MT, Hupalo M, Thiel PA, Tringides MC
Journal TitleJournal of Physics-Condensed Matter
Volume25
Pages225005
Date Published06
Type of ArticleArticle
ISBN Number0953-8984
Accession NumberWOS:000319262200006
Keywordsanisotropy, films, gd, model, surface, tb
Abstract

Graphene based spintronic devices require an understanding of the growth of magnetic metals. Rare earth metals have large bulk magnetic moments so they are good candidates for such applications, and it is important to identify their growth mode. Dysprosium was deposited on epitaxial graphene, prepared by thermally annealing 6H-SiC(0001). The majority of the grown islands have triangular instead of hexagonal shapes. This is observed both for single layer islands nucleating at the top of incomplete islands and for fully completed multi-height islands. We analyze the island shape distribution and stacking sequence of successively grown islands to deduce that the Dy islands have fcc(111) structure, and that the triangular shapes result from asymmetric barriers to corner crossing.

URL<Go to ISI>://WOS:000319262200006
DOI10.1088/0953-8984/25/22/225005