Magnetic phase transitions and electrical switching in Gd-5(Sn0.3Ge3.7) induced by magnetic field

TitleMagnetic phase transitions and electrical switching in Gd-5(Sn0.3Ge3.7) induced by magnetic field
Publication TypeJournal Article
Year of Publication2013
AuthorsLevin EM
Journal TitleJournal of Magnetism and Magnetic Materials
Volume340
Pages113-119
Date Published08
Type of ArticleArticle
ISBN Number0304-8853
Accession NumberWOS:000319333500022
KeywordsElectrical switching, Gadolinium-based alloy, Magnetic diagram, magnetic phase transition
Abstract

Temperature and magnetic field dependences of the magnetization and electrical resistivity of zero-fieldcooled (ZFC) Gd-5(Sn0.3Ge3.7) with a distinctly layered crystal structure have been studied. The unit cell of Gd5Ge4-based compounds is formed by 2D-like fragments, so-called slabs. Between 4.2 and 17 K, ZFC Gd-5(Sn0.3Ge3.7) shows an antiferromagnetic state [AFM(I)], which can be irreversibly transformed by a magnetic field to the ferromagnetic (FM) state. The critical magnetic field required for the irreversible AFM(I) -> FM transition in Gd-5(Sn0.3Ge3.7) at 4.2 K is 38 kOe, which is 2-fold larger than observed in Ge5Ge4, 19 kOe. Additionally, ZFC Gd-5(Sn0.3Ge3.7) above similar to 30 K shows another antiferromagnetic state [AFM(II)], which can be reversibly transformed by a magnetic field to the FM state. The difference between AFM(I) and AFM(II) states (phases) in Gd-5(Sn0.3Ge3.7) can be attributed to the orientation of Gd magnetic moments, i.e., their orientation perpendicular or parallel to the slabs. In the temperature range of 17 K <= T <= 30 K, both AFM(I) and AFM(II) states (phases) may coexist in the alloy and can be irreversibly or reversibly transformed to the FM state. Magnetic phase transitions in Gd-5(Sn0.3Ge3.7) are accompanied with reversible or irreversible switching between the low- [AFM(I) and AFM(II)] and high-resistivity (FM) states. Published by Elsevier B.V.

URL<Go to ISI>://WOS:000319333500022
DOI10.1016/j.jmmm.2013.04.002