Competition between area and height evolution of Pb islands on a Si(111) surface

TitleCompetition between area and height evolution of Pb islands on a Si(111) surface
Publication TypeJournal Article
Year of Publication2009
AuthorsLi M, Wang CZ, Evans JW, Hupalo M, Tringides MC, Ho KM
Journal TitlePhysical Review B
Volume79
Pages113404
Date Published03/01
ISBN Number1098-0121
Accession NumberISI:000264768900018
Keywordselemental semiconductors, growth, island structure, lead, scanning tunnelling microscopy, silicon, surface structure
Abstract

Scanning tunneling microscopy experiments reveal that small Pb islands with unstable heights, e.g., four layers, on a Si(111) surface decay during coarsening, whereas large islands do not decay but grow to a stable height. This bifurcation in evolution is analyzed by incorporating quantum size effects into theoretical models for island growth dynamics with appropriate geometries. The effective energy barrier for Pb atoms to reach the top of four-layer islands is estimated at about 0.26 eV.

URL<Go to ISI>://000264768900018
DOI10.1103/Physrevb.79.113404