Cross-sectional aspect ratio modulated electronic properties in Si/Ge core/shell nanowires

TitleCross-sectional aspect ratio modulated electronic properties in Si/Ge core/shell nanowires
Publication TypeJournal Article
Year of Publication2013
AuthorsLiu N, Lu N, Yao YX, Zhang GP, Wang CZ, Ho KM
Journal TitleJournal of Physics D-Applied Physics
Volume46
Pages135302
Date Published04
Type of ArticleArticle
ISBN Number0022-3727
Accession NumberWOS:000315948500022
Keywordsge/si, growth, metals, molecular-dynamics, SENSOR, si, silicon nanowires, total-energy calculations
Abstract

Electronic structures of (4, n) and (m, 4) (the NW has m layers parallel to the {1 1 1} facet and n layers parallel to {1 1 0}) Si/Ge core/shell nanowires (NWs) along the [1 1 2] direction with cross-sectional aspect ratio (m/n) from 0.36 to 2.25 are studied by first-principles calculations. An indirect to direct band gap transition is observed as m/n decreases, and the critical values of m/n and diameter for the transition are also estimated. The size of the band gap also depends on the aspect ratio. These results suggest that m/n plays an important role in modulating the electronic properties of the NWs.

URL<Go to ISI>://WOS:000315948500022
DOI10.1088/0022-3727/46/13/135302