Interplane resistivity of isovalent doped BaFe2(As1-xPx)(2)

TitleInterplane resistivity of isovalent doped BaFe2(As1-xPx)(2)
Publication TypeJournal Article
Year of Publication2013
AuthorsTanatar MA, Hashimoto K, Kasahara S, Shibauchi T, Matsuda Y, Prozorov R
Journal TitlePhysical Review B
Volume87
Pages104506
Date Published03
Type of ArticleArticle
ISBN Number1098-0121
Accession NumberWOS:000315730700005
Keywordssuperconductivity
Abstract

Temperature-dependent interplane resistivity rho(c)(T) was measured for the iron-based superconductor BaFe2(As1-xPx)(2) over a broad isoelectron phosphorus substitution range from x = 0 to x = 0.60, from nonsuperconducting parent compound to heavily overdoped superconducting composition with T-c approximate to 10 K. The features due to structural and magnetic transitions are clearly resolved in rho(c)(T) of the underdoped crystals. A characteristic maximum in rho(c)(T), found in the parent BaFe2As2 at around 200 K, moves rapidly with phosphorus substitution to high temperatures. At the optimal doping, the interplane resistivity shows T-linear temperature dependence without any crossover anomalies, similar to the previously reported in-plane resistivity. This observation is in stark contrast with dissimilar temperature dependencies found at optimal doping in electron-doped Ba(Fe1-xCox)(2)As-2. Our finding suggests that despite similar values of the resistivity and its anisotropy, the temperature-dependent transport in the normal state is very different in electron and isoelectron-doped compounds. Similar temperature dependence of both in-plane and interplane resistivities, in which the dominant contributions are coming from different parts of the Fermi surface, suggests that scattering is the same on the whole Fermi surface. Since magnetic fluctuations are expected to be much stronger on the quasinested sheets, this observation may point to the importance of the interorbital scattering between different sheets. DOI: 10.1103/PhysRevB.87.104506

URL<Go to ISI>://WOS:000315730700005
DOI10.1103/PhysRevB.87.104506