Creating nanoscale Ag patterns on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface via guided self-assembly

TitleCreating nanoscale Ag patterns on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface via guided self-assembly
Publication TypeJournal Article
Year of Publication2012
AuthorsBelianinov A, Unal B, Tringides MC, Thiel PA
Journal TitleJournal of Vacuum Science & Technology B
Volume30
Pages050601
Date Published09
Type of ArticleArticle
ISBN Number1071-1023
Accession NumberWOS:000309073500001
Keywordsaggregates (materials), deposition, elemental semiconductors, field, nanofabrication, nanopatterning, NANOSTRUCTURES, restructuring process, SCANNING TUNNELING MICROSCOPE, scanning tunnelling microscopy, Self-assembly, si(111), silicon, silver, surface diffusion, tip, vacuum deposition
Abstract

Patterns of Ag nanostructures can be created on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface, using a simple two-step process in ultrahigh vacuum. First, patterns are created using the tip of a scanning tunneling microscope. Second, Ag is deposited at room temperature. The Ag diffuses over long distances on the surface and selectively aggregates at the patterned regions. The size of the Ag features is similar to 3-4 nm.

URL<Go to ISI>://WOS:000309073500001
DOI10.1116/1.4738745
Alternate JournalJ. Vac. Sci. Technol. B