Memory effects in photoinduced femtosecond magnetization rotation in ferromagnetic GaMnAs

TitleMemory effects in photoinduced femtosecond magnetization rotation in ferromagnetic GaMnAs
Publication TypeJournal Article
Year of Publication2009
AuthorsWang J, Cotoros I, Chemla DS, Liu X, Furdyna JK, Chovan J, Perakis IE
Journal TitleApplied Physics Letters
Volume94
Pages021101
Date Published01/12
ISBN Number0003-6951
Accession NumberISI:000262534900001
Keywordsferromagnetic materials, gallium arsenide, gallium compounds, iii-v semiconductors, magnetic semiconductors, magnetic storage, magnetic transitions, magnetisation, manganese compounds, semiconductors, ultrafast magnetooptics
Abstract

We report a photoinduced femtosecond change in the magnetization direction in the ferromagnetic semiconductor GaMnAs, which allows for the detection of a four-state magnetic memory on the femtosecond time scale. The temporal profile of the magnetization exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a carrier-mediated nonthermal regime within the first 200 fs to a thermal, lattice-heating picosecond regime.

URL<Go to ISI>://000262534900001
DOI10.1063/1.3058765