Preferential surface oxidation of Gd in Gd(5)Ge(4)

TitlePreferential surface oxidation of Gd in Gd(5)Ge(4)
Publication TypeJournal Article
Year of Publication2012
AuthorsYuen CD, Miller GJ, Thiel PA
Journal TitleApplied Surface Science
Volume258
Pages2757-2760
Date Published01
Type of ArticleArticle
ISBN Number0169-4332
Accession NumberWOS:000299162300085
KeywordsBinary alloy, oxidation, silicon, transition, X-ray photoelectron spectroscopy
Abstract

Gd oxidizes preferentially at the (0 1 0) surface of Gd(5)Ge(4). This is consistent with thermodynamic data for the bulk oxides. Upon oxidation in vacuum, the gadolinium oxide displaces or covers the Ge. Oxidation is more extensive at 600 K than at 300 K, because more oxygen is incorporated into the surface and the shift of the Gd binding energy is larger. (C) 2011 Elsevier B.V. All rights reserved.

URL<Go to ISI>://WOS:000299162300085
DOI10.1016/j.apsusc.2011.10.127
Alternate JournalAppl. Surf. Sci.