Chemical Pressure and Rare-Earth Orbital Contributions in Mixed Rare-Earth Silicides La(5-x)Y(x)Si(4) (0 <= x <= 5)

TitleChemical Pressure and Rare-Earth Orbital Contributions in Mixed Rare-Earth Silicides La(5-x)Y(x)Si(4) (0 <= x <= 5)
Publication TypeJournal Article
Year of Publication2011
AuthorsWang H, Wang F, Jones K, Miller GJ
Journal TitleInorganic Chemistry
Volume50
Pages12714-12723
Date Published12
Type of ArticleArticle
ISBN Number0020-1669
Accession NumberWOS:000297782200051
Keywordscrystal-structure, electrical-resistance, initio molecular-dynamics, magnetic-field, PHASE-RELATIONSHIPS, silicon compounds, system, total-energy calculations, transition, wave basis-set
Abstract

A crystallographic study and theoretical analysis of the structural and La/Y site preferences in the La(5-x)Y(x)Si(4) (0 <= x <= 5) series prepared by high-temperature methods is presented. At room temperature, La-rich La(5-x)Y(x)Si(4) phases with x <= 3.0 exhibit the tetragonal Zr(5)Si(4)-type structure (space group P4(1)2(1)2, Z = 4, Pearson symbol tP36), which contains only Si-Si dimers. On the other hand, Y-rich phases with x = 4.0 and 4.5 adopt the orthorhombic Gd(5)Si(4)-type structure (space group Pnma, Z = 4, Pearson symbol oP36), also with Si Si dimers, whereas Y(5)Si(4) forms the monoclinic Gd(5)Si(2)Ge(2) structure (space group P2(1)/c, Z = 4, Pearson symbol mP36), which exhibits 50% "broken" Si-Si dimers. Local and long-range structural relationships among the tetragonal, orthorhombic, and monoclinic structures are discussed. Refinements from single crystal X-ray diffraction studies of the three independent sites for La or Y atoms in the asymmetric unit reveal partial mixing of these elements, with clearly different preferences for these two elements. First-principles electronic structure calculations, used to investigate the La/Y site preferences and structural trends in the La(5-x)Y(x)Si(4) series, indicate that long- and short-range structural features are controlled largely by atomic sizes. La 5d and Y 4d orbitals, however, generate distinct, yet subtle effects on the electronic density of states curves, and influence characteristics of Si Si bonding in these phases.

URLhttp://pubs.acs.org/doi/pdfplus/10.1021/ic201840q
DOI10.1021/ic201840q
Alternate JournalInorg. Chem.