# Strain Effects in Ge/Si and Si/Ge Core/Shell Nanowires

Title | Strain Effects in Ge/Si and Si/Ge Core/Shell Nanowires |

Publication Type | Journal Article |

Year of Publication | 2011 |

Authors | Liu N, Lu N, Yao YX, Li YR, Wang CZ, Ho KM |

Journal Title | Journal of Physical Chemistry C |

Volume | 115 |

Pages | 15739-15742 |

Date Published | 08 |

Type of Article | Article |

ISBN Number | 1932-7447 |

Accession Number | WOS:000293758700002 |

Keywords | heterostructures, metals, silicon nanowires |

Abstract | Strain-dependent electronic properties of [112] Ge/Si and Si/Ge core/shell nanowires are studied using first-principles calculations within density functional theory. We show that the transition from indirect to quasidirect gap can be obtained by applying compressive strain and the width of the band gap can be tuned by strain. The analysis of the projected density of states indicates that the quasidirect gap is strongly influenced by the atoms in the {111} facets. Several possible applications have been discussed based on their distinguished electronic properties. |

DOI | 10.1021/jp110379n |

Alternate Journal | J. Phys. Chem. C |