In-situ elevated-temperature TEM study of (AgSbTe2)(15)(GeTe)(85)

TitleIn-situ elevated-temperature TEM study of (AgSbTe2)(15)(GeTe)(85)
Publication TypeJournal Article
Year of Publication2007
AuthorsCook BA, Wei XZ, Harringa JL, Kramer MJ
Journal TitleJournal of Materials Science
Volume42
Pages7643-7646
Date PublishedSep
Type of ArticleArticle
ISBN Number0022-2461
Accession NumberISI:000248057300004
KeywordsFIGURE, merit
Abstract

(AgSbTe2)(15)(GeTe)(85) (TAGS-85) is a p-type semiconductor characterized by a maximum dimensionless thermoelectric figure of merit of 1.4-1.7 at elevated temperature. In this study, the microstructure of as-solidified TAGS-85 at room temperature and elevated temperature (160 degrees C) was investigated using TEM. At room temperature, pervasive twinning was observed throughout the specimen. Upon heating to above 120 degrees C, some of the twins dissolved and new point defects began to nucleate. The mechanisms responsible for formation of high temperature defects are discussed.

DOI10.1007/s10853-007-1898-x
Alternate JournalJ. Mater. Sci.