Strongly-driven coarsening of height-selected Pb islands on Si(111)

TitleStrongly-driven coarsening of height-selected Pb islands on Si(111)
Publication TypeJournal Article
Year of Publication2007
AuthorsLi M, Evans JW, Wang CZ, Hupalo M, Tringides MC, Chan TL, Ho KM
Journal TitleSurface Science
Volume601
PagesL140-L144
Date PublishedDec
Type of ArticleArticle
ISBN Number0039-6028
Accession NumberISI:000251619600006
Keywordscoarsening, growth, metal-on-semiconductor thin film structures, NANOSTRUCTURES, PB/SI(111)-(7X7), quantum size effects, rate equations, SI(001), surfaces, UNIFORM
Abstract

A theoretical model is proposed to describe the rapid coarsening observed for Pb islands on a Si(111) surface where classical kinetics breaks down. In this system, quantum size effects produce mesa-like Pb islands with chemical potentials depending strongly on their heights, in addition to the usual dependence on the step curvature. Furthermore, a dense wetting layer enables fast mass transport between islands. Incorporating these features, our theoretical model predicts evolution of the island height distribution in good agreement with experiments. (C) 2007 Elsevier B.V. All rights reserved.

DOI10.1016/j.susc.2007.08-029
Alternate JournalSurf. Sci.