Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

TitleColossal positive magnetoresistance in a doped nearly magnetic semiconductor
Publication TypeJournal Article
Year of Publication2008
AuthorsHu RW, Thomas KJ, Lee Y, Vogt T, Choi ES, Mitrovic VF, Hermann RP, Grandjean F, Canfield PC, Kim JW, Goldman AI, Petrovic C
Journal TitlePhysical Review B
Volume77
Pages085212
Date PublishedFeb
Type of ArticleArticle
ISBN Number1098-0121
Accession NumberISI:000253764300053
KeywordsCONDUCTIVITY, electrons, FERROMAGNETIC-METAL, FESB2, field, INSULATOR, QUANTUM INTERFERENCE, transition
Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

DOI10.1103/PhysRevB.77.085212
Alternate JournalPhys. Rev. B