Contribution to book on gallium oxide and related alloys

Calculated formation energy diagrams for (a) unhydrogenated and (b) doubly hydrogenated cation vacancies that are believed to be the dominant source of electrical compensation in n-type Ga2O3 and related alloys, shown as a function of the Fermi level. Vacancies can accommodate multiple H that are strongly trapped and can influence the electrical and optical properties.
Calculated formation energy diagrams for (a) unhydrogenated and (b) doubly hydrogenated cation vacancies that are believed to be the dominant source of electrical compensation in n-type Ga2O3 and related alloys, shown as a function of the Fermi level. Vacancies can accommodate multiple H that are strongly trapped and can influence the electrical and optical properties. 

CMI scientists at Lawrence Livermore National Laboratory contributed to this research.

Achievement

Publication of book chapter summarizing state-of-the-art theoretical understanding of point defects in Ga2O3 

Significance and impact

  • Demonstration of world-leading expertise in this promising area of research
  • CMI researchers contributed to the most comprehensive resource available on the properties of Ga2O3 and related alloys

Details and next steps

  • This book provides a review of our current understanding of gallium oxide and will lead to accelerating the advancement (Al,Ga)2O3 
     
J. B. Varley, “Gallium Oxide, Materials Properties, Crystal Growth, and Devices,” pp. 329–348, 2020, doi: 10.1007/978-3-030-37153-1_18.
J. B. Varley, “Gallium Oxide, Materials Properties, Crystal Growth, and Devices,” pp. 329–348, 2020, doi: 10.1007/978-3-030-37153-1_18.