Unusual thermal stability of quantum size effect Pb islands grown on Si(111)-In(4x1)

TitleUnusual thermal stability of quantum size effect Pb islands grown on Si(111)-In(4x1)
Publication TypeJournal Article
Year of Publication2007
AuthorsYakes M, Chen J, Hupalo M, Tringides MC
Journal TitleApplied Physics Letters
Volume90
Pages163117
Date PublishedApr
Type of ArticleArticle
ISBN Number0003-6951
Accession NumberISI:000245870400109
Abstract

Pb islands grown on the anisotropic Si(111)-In(4x1) were studied using scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. Anisotropic wire shapes with a uniform island height of four layers due to quantum size effects are observed as well as a preferred width of 6.6 nm. Unlike islands grown on clean and Pb covered Si(111), Pb islands grown on the Si(111)-In(4x1) reconstructed surface maintain a height of four layers to room temperature. The increased temperature stability enhances the potential use of the grown structures for technological applications. (c) 2007 American Institute of Physics.

DOI10.1063/1.2724910
Alternate JournalAppl. Phys. Lett.