Surface-driven electronic structure in LaFeAsO studied by angle-resolved photoemission spectroscopy

TitleSurface-driven electronic structure in LaFeAsO studied by angle-resolved photoemission spectroscopy
Publication TypeJournal Article
Year of Publication2010
AuthorsLiu C, Lee Y, Palczewski AD, Yan JQ, Kondo T, Harmon BN, McCallum RW, Lograsso TA, Kaminski A
Journal TitlePhysical Review B
Volume82
Pages075135
Date Published8/26
ISBN Number1098-0121
Accession NumberISI:000281268400003
KeywordsARPES, compound, iron, nodeless superconducting gaps
Abstract

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle- resolved photoemission spectroscopy (ARPES). By comparing with a full- potential linear augmented plane wave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong- polarization dependence of the band structure and a temperature- dependent holelike band around the M point. The two phenomena give additional evidences for the existence of the surface- driven electronic structure.

URL<Go to ISI>://000281268400003
DOI10.1103/Physrevb.82.075135