A Ferroelectric Oxide Made Directly on Silicon

TitleA Ferroelectric Oxide Made Directly on Silicon
Publication TypeJournal Article
Year of Publication2009
AuthorsWarusawithana MP, Cen C, Sleasman CR, Woicik JC, Li YL, Kourkoutis LF, Klug JA, Li H, Ryan P, Wang LP, Bedzyk M, Muller DA, Chen LQ, Levy J, Schlom DG
Journal TitleScience
Volume324
Pages367-370
Date Published04/17
ISBN Number0036-8075
Accession NumberISI:000265221600036
Keywordsgrowth, multilayers, perovskite films, srtio3, thickness, thin-films, ultrathin films
Abstract

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

URL<Go to ISI>://000265221600036
DOI10.1126/Science.1169678