Effect of Si doping and applied pressure upon magnetostructural properties of Tb-5(SixGe1-x)(4) magnetocaloric compounds

TitleEffect of Si doping and applied pressure upon magnetostructural properties of Tb-5(SixGe1-x)(4) magnetocaloric compounds
Publication TypeJournal Article
Year of Publication2011
AuthorsTseng YC, Ma HJ, Yang CY, Mudryk Y, Pecharsky VK, Gschneidner KA, Souza-Neto NM, Haskel D
Journal TitlePhysical Review B
Volume83
Pages104419
Date Published03/28
ISBN Number1098-0121
Accession NumberISI:000288854700003
KeywordsMAGNETIC CIRCULAR-DICHROISM
Abstract

The composition-and pressure-dependent magnetostructural properties of Tb-5(SixGe1-x)(4) (x = 0.4, 0.485, 0.625, and 0.7) were investigated using x-ray powder diffraction and x-ray magnetic circular dichroism in a diamond anvil cell, respectively. Substituting the smaller-size Si for Ge stabilizes a single-phase, ferromagnetic (FM) orthorhombic O(I) structure for x >= 0.7. Similarly, application of external pressure causes a canted antiferromagnetic orthorhombic O(II) sample (x=0.4) to transform into an FMO(I) phase at 4 GPa. The element- and orbital-specific x-ray absorption data indicate that the Tb 4f orbital occupation changes with external pressure, likely through 4f-5d electronic mixing, yet no changes in Tb 4f electronic structure are observed with Si doping. The results point to different mechanisms behind the enhancement of FM exchange interactions in Tb-5(SixGe1-x)(4) with chemical and applied pressure, respectively.

URL<Go to ISI>://000288854700003
DOI10.1103/PhysRevB.83.104419
Alternate JournalPhys Rev BPhys Rev B