@article {1084,
title = {Single-crystal growth and physical properties of the layered arsenide BaRh2As2},
journal = {Physical Review B},
volume = {78},
number = {10},
year = {2008},
month = {Sep},
pages = {104512},
type = {Article},
abstract = {Single crystals of BaRh2As2 have been synthesized from a Pb flux. We present the room-temperature crystal structure, single-crystal x-ray diffraction measurements as a function of temperature T, anisotropic magnetic susceptibility chi versus T, electrical resistivity in the ab plane rho versus T, Hall coefficient versus T and magnetic field H, and heat capacity C versus T measurements on the crystals. The single-crystal structure determination confirms that BaRh2As2 forms in the tetragonal ThCr2Si2-type structure (space group I4/mmm) with lattice parameters a=b=4.0564(6) angstrom and c=12.797(4) angstrom. Band-structure calculations show that BaRh2As2 should be metallic with a small density of states at the Fermi energy N(E-F)=3.49 states/eV f.u. (where f.u. equivalent to formula unit) for both spin directions. rho(T) data in the ab plane confirm that the material is indeed metallic with a residual resistivity rho(2 K)=29 mu Omega cm and with a residual resistivity ratio rho(310 K)/rho(2 K)=5.3. The observed chi(T) is small (similar to 10(-5) cm(3)/mol) and weakly anisotropic with chi(ab)/chi(c)approximate to 2. The C(T) data indicate a small density of states at the Fermi energy with the low-temperature Sommerfeld coefficient gamma=4.7(9) mJ/mol K-2. There are no indications of superconductivity, spin-density wave, or structural transitions between 2 and 300 K. We compare the calculated density of states versus energy of BaRh2As2 with that of BaFe2As2.},
keywords = {superconductivity},
isbn = {1098-0121},
doi = {10.1103/PhysRevB.78.104512},
author = {Singh, Y. and Lee, Y. and Nandi, S. and Kreyssig, A. and Ellern, A. and Das, S. and Nath, R. and Harmon, B. N. and Goldman, A. I. and Johnston, D. C.}
}